IV1D12020T2
manufacturer:
Inventchip
Description:
DIODE SIL CARB 1.2KV 54A TO247-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
120 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 20 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
1114pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Inventchip
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
54A
Speed:
No Recovery Time > 500mA (Io)
Introduction
Diode 1200 V 54A Through Hole TO-247-2
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| Image | Part # | Description | |
|---|---|---|---|
|
|
IV1D12010T2 |
DIODE SIL CARB 1.2KV 30A TO247-2
|
|
|
|
IV1D12010O2 |
DIODE SIL CARB 1.2KV 28A TO220-2
|
|
|
|
IV1D06006P3 |
DIODE SIC 650V 16.7A TO252-3
|
|
|
|
IV1D12015T2 |
DIODE SIL CARB 1.2KV 44A TO247-2
|
|
|
|
IV1D12005O2 |
DIODE SIL CARB 1.2KV 17A TO220-2
|
|
|
|
IV1D06006O2 |
DIODE SIL CARB 650V 17.4A TO220
|
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