G3S06504C
manufacturer:
Global Power Technology-GPT
Description:
DIODE SIL CARB 650V 11.5A TO252
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 4 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
181pF @ 0V, 1MHz
Supplier Device Package:
TO-252
Reverse Recovery Time (trr):
0 Ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
11.5A
Speed:
No Recovery Time > 500mA (Io)
Introduction
Diode 650 V 11.5A Surface Mount TO-252
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