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IV1Q12160T4
manufacturer:
Inventchip
Description:
SIC MOSFET, 1200V 160MOHM, TO-24
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
43 NC @ 20 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
885 PF @ 800 V
Series:
-
Vgs (Max):
+20V, -5V
Vgs(th) (Max) @ Id:
2.9V @ 1.9mA
Supplier Device Package:
TO-247-4
Rds On (Max) @ Id, Vgs:
195mOhm @ 10A, 20V
Mfr:
Inventchip
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Power Dissipation (Max):
138W (Tc)
Package / Case:
TO-247-4
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
IV1Q12160T4
Introduction
N-Channel 1200 V 20A (Tc) 138W (Tc) Through Hole TO-247-4
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