BC856S E6327
manufacturer:
Infineon Technologies
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Mounting Type:
Surface Mount
Frequency - Transition:
250MHz
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
65V
Supplier Device Package:
SOT-363
Mfr:
Infineon Technologies
Current - Collector Cutoff (Max):
15nA (ICBO)
Power - Max:
250mW
Package / Case:
6-VSSOP, SC-88, SOT-363
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Base Product Number:
BC856
Introduction
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW Surface Mount SOT-363
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