PBSS5130PAP,115
manufacturer:
NXP USA Inc.
Description:
NOW NEXPERIA PBSS5130PAP - SMALL
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays
Current - Collector (Ic) (Max):
1A
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Mounting Type:
Surface Mount
Frequency - Transition:
125MHz
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
280mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max):
30V
Supplier Device Package:
6-HUSON (2x2)
Mfr:
NXP USA Inc.
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
510mW
Package / Case:
6-UFDFN Exposed Pad
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
170 @ 500mA, 2V
Base Product Number:
PBSS5130
Introduction
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)
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