BFP 182W H6327
manufacturer:
Infineon Technologies
Description:
RF BIPOLAR TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
35mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
8GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
12V
Supplier Device Package:
PG-SOT343-4
Mfr:
Infineon Technologies
Noise Figure (dB Typ @ F):
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Power - Max:
250mW
Gain:
22dB
Package / Case:
SC-82A, SOT-343
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 10mA, 8V
Introduction
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT343-4
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