HSG1002VE-TL-E
manufacturer:
Renesas Electronics America Inc
Description:
RF 0.035A C BAND GERMANIUM NPN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
35mA
Product Status:
Obsolete
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
38GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
3.5V
Supplier Device Package:
4-MFPAK
Mfr:
Renesas Electronics America Inc
Noise Figure (dB Typ @ F):
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Power - Max:
200mW
Gain:
8dB ~ 19.5dB
Package / Case:
4-SMD, Gull Wing
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 5mA, 2V
Introduction
RF Transistor NPN 3.5V 35mA 38GHz 200mW Surface Mount 4-MFPAK
Send RFQ
Stock:
MOQ: