BFR360L3E6765
manufacturer:
Infineon Technologies
Description:
LOW-NOISE SI TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
35mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
14GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
9V
Supplier Device Package:
PG-TSLP-3-1
Mfr:
Infineon Technologies
Noise Figure (dB Typ @ F):
1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Power - Max:
210mW
Gain:
11.5dB ~ 16dB
Package / Case:
SC-101, SOT-883
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 15mA, 3V
Introduction
RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1
Send RFQ
Stock:
MOQ: