BFR949L3E6327
manufacturer:
Infineon Technologies
Description:
RF BIPOLAR TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
50mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
9GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
10V
Supplier Device Package:
PG-TSLP-3-1
Mfr:
Infineon Technologies
Noise Figure (dB Typ @ F):
1dB ~ 2.5dB @ 1GHz
Power - Max:
250mW
Gain:
21.5dB
Package / Case:
SC-101, SOT-883
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 5mA, 6V
Introduction
RF Transistor NPN 10V 50mA 9GHz 250mW Surface Mount PG-TSLP-3-1
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