BFR193FH6327
manufacturer:
Infineon Technologies
Description:
HIGH LINEARITY TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
80mA
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
8GHz
Package:
Bulk
Series:
Automotive, AEC-Q101
Voltage - Collector Emitter Breakdown (Max):
12V
Supplier Device Package:
PG-TSFP-3-1
Mfr:
Infineon Technologies
Noise Figure (dB Typ @ F):
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Power - Max:
580mW
Gain:
19dB
Package / Case:
SOT-723
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 30mA, 8V
Introduction
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3-1
Send RFQ
Stock:
MOQ: