2SC3585-T1B-A
manufacturer:
Renesas Electronics America Inc
Description:
NPN TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar RF Transistors
Current - Collector (Ic) (Max):
35mA
Product Status:
Obsolete
Transistor Type:
NPN
Mounting Type:
Surface Mount
Frequency - Transition:
10GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
10V
Supplier Device Package:
SOT23-3 (TO-236)
Mfr:
Renesas Electronics America Inc
Noise Figure (dB Typ @ F):
1.8dB @ 2GHz
Power - Max:
200mW
Gain:
9dB
Package / Case:
TO-236-3, SC-59, SOT-23-3
Operating Temperature:
150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 6V
Introduction
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT23-3 (TO-236)
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