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MX0912B351Y

manufacturer:
Ampleon USA Inc.
Description:
RF POWER BIPOLAR TRANSISTOR, 1-E
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Current - Collector (Ic) (Max):
21A
Product Status:
Active
Transistor Type:
NPN
Mounting Type:
Chassis Mount
Frequency - Transition:
1.215GHz
Package:
Bulk
Series:
-
Voltage - Collector Emitter Breakdown (Max):
20V
Supplier Device Package:
CDFM2
Mfr:
Ampleon USA Inc.
Noise Figure (dB Typ @ F):
-
Power - Max:
960W
Gain:
8dB
Package / Case:
SOT-439A
Operating Temperature:
200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Introduction
RF Transistor NPN 20V 21A 1.215GHz 960W Chassis Mount CDFM2
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