R1RW0416DSB-2PI#D1
manufacturer:
Renesas
Description:
R1RW0416D-I - Wide Temperature R
Category:
Integrated Circuits (ICs)
Specifications
Category:
Integrated Circuits (ICs)
Memory
Memory
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Series:
R1RW0416DI
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
12ns
Supplier Device Package:
44-TSOP II
Memory Type:
Volatile
Mfr:
Renesas
Memory Size:
4Mbit
Voltage - Supply:
3V ~ 3.6V
Package / Case:
44-TSOP (0.400", 10.16mm Width)
Memory Organization:
256K X 16
Operating Temperature:
-40°C ~ 85°C (TA)
Technology:
SRAM - Asynchronous
Access Time:
12 Ns
Memory Format:
SRAM
Introduction
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Related Products
R1LV1616HSA-5SI#B1
R1LV1616HSA - Wide Temperature R
HN58C256AP10E
HN58C256 - PARALLEL 256KBIT EEPR
M5M5V108DKV-70HIST
STANDARD SRAM, 128KX8, 70NS, CMO
M5M5V108DVP-70H#BT
STANDARD SRAM, 128KX8, 70NS, CMO
R1WV6416RBG-5SI#B0
R1WV6416RBG-5SI - Low Power SRAM
R1LP5256ESA-5SI#S1
R1LP5256 - 256Kb Advanced LPSRAM
R1LV0108ESA-5SI#B1
R1LV0108E - 1Mb Advanced LPSRAM
R1LP5256ESA-5SI#B1
R1LP5256 - 256Kb Advanced LPSRAM
HN58V66ATI10E
HN58V66 - PARALLEL 64KBIT EEPROM
UPD48576118F1-E18-DW1-A
IC DRAM 576MBIT HSTL 144TFBGA
| Image | Part # | Description | |
|---|---|---|---|
|
|
R1LV1616HSA-5SI#B1 |
R1LV1616HSA - Wide Temperature R
|
|
|
|
HN58C256AP10E |
HN58C256 - PARALLEL 256KBIT EEPR
|
|
|
|
M5M5V108DKV-70HIST |
STANDARD SRAM, 128KX8, 70NS, CMO
|
|
|
|
M5M5V108DVP-70H#BT |
STANDARD SRAM, 128KX8, 70NS, CMO
|
|
|
|
R1WV6416RBG-5SI#B0 |
R1WV6416RBG-5SI - Low Power SRAM
|
|
|
|
R1LP5256ESA-5SI#S1 |
R1LP5256 - 256Kb Advanced LPSRAM
|
|
|
|
R1LV0108ESA-5SI#B1 |
R1LV0108E - 1Mb Advanced LPSRAM
|
|
|
|
R1LP5256ESA-5SI#B1 |
R1LP5256 - 256Kb Advanced LPSRAM
|
|
|
|
HN58V66ATI10E |
HN58V66 - PARALLEL 64KBIT EEPROM
|
|
|
|
UPD48576118F1-E18-DW1-A |
IC DRAM 576MBIT HSTL 144TFBGA
|
Send RFQ
Stock:
MOQ: