BYC58X-600,127
manufacturer:
WeEn Semiconductors
Description:
DIODE GEN PURP 600V 8A TO220FP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
150 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
3.2 V @ 8 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220FP
Reverse Recovery Time (trr):
12.5 Ns
Mfr:
WeEn Semiconductors
Technology:
Standard
Operating Temperature - Junction:
150°C (Max)
Package / Case:
TO-220-2 Full Pack, Isolated Tab
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
BYC58
Introduction
Diode 600 V 8A Through Hole TO-220FP
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| Image | Part # | Description | |
|---|---|---|---|
|
|
NXPSC126506Q |
DIODE SIL CARB 650V 12A TO220AC
|
|
|
|
WNSC10650T6J |
DIODE SIL CARBIDE 650V 10A 5DFN
|
|
|
|
WNSC08650T6J |
DIODE SIL CARBIDE 650V 8A 5DFN
|
|
|
|
WNSC6D08650Q |
DIODE SIL CARB 650V 8A TO220AC
|
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|
NXPSC04650D6J |
DIODE SIL CARBIDE 650V 4A DPAK
|
|
|
|
BYC30-1200PQ |
DIODE GEN PURP 1.2KV 30A TO220AC
|
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|
WNSC04650T6J |
DIODE SIL CARBIDE 650V 4A 5DFN
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|
BYC30B-600PJ |
DIODE GEN PURP 600V 30A D2PAK
|
|
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|
BYC20-600,127 |
DIODE GEN PURP 500V 20A TO220AC
|
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|
BYC20D-600PQ |
DIODE GEN PURP 600V 20A TO220AC
|
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