FESB16DTHE3_A/P
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
DIODE GEN PURP 200V 16A TO263AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
975 MV @ 16 A
Package:
Tube
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
175pF @ 4V, 1MHz
Supplier Device Package:
TO-263AB (D²PAK)
Reverse Recovery Time (trr):
35 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
16A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
FESB16
Introduction
Diode 200 V 16A Surface Mount TO-263AB (D²PAK)
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