RFN30TS6SGC11
manufacturer:
Rohm Semiconductor
Description:
DIODE GEN PURP 600V 30A TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Not For New Designs
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 30 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-247
Reverse Recovery Time (trr):
60 Ns
Mfr:
Rohm Semiconductor
Technology:
Standard
Operating Temperature - Junction:
150°C (Max)
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
30A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
RFN30
Introduction
Diode 600 V 30A Through Hole TO-247
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