IDK09G65C5XTMA2
manufacturer:
Infineon Technologies
Description:
DIODE SIL CARB 650V 9A TO263-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Not For New Designs
Current - Reverse Leakage @ Vr:
1.6 MA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 9 A
Package:
Tape & Reel (TR)
Series:
CoolSiC™+
Capacitance @ Vr, F:
270pF @ 1V, 1MHz
Supplier Device Package:
PG-TO263-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
9A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDK09G65
Introduction
Diode 650 V 9A Surface Mount PG-TO263-2
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