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GP3D010A065B
manufacturer:
SemiQ
Description:
DIODE SIL CARB 650V 10A TO247-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
25 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 10 A
Package:
Tube
Series:
Amp+™
Capacitance @ Vr, F:
419pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
SemiQ
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GP3D010
Model Number:
GP3D010A065B
Introduction
Diode 650 V 10A Through Hole TO-247-2
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