FR12JR02
manufacturer:
GeneSiC Semiconductor
Description:
DIODE GEN PURP REV 600V 12A DO4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
25 µA @ 100 V
Mounting Type:
Chassis, Stud Mount
Voltage - Forward (Vf) (Max) @ If:
800 MV @ 12 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
DO-4
Reverse Recovery Time (trr):
250 Ns
Mfr:
GeneSiC Semiconductor
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
DO-203AA, DO-4, Stud
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
12A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Introduction
Diode 600 V 12A Chassis, Stud Mount DO-4
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