GB10MPS17-247
manufacturer:
GeneSiC Semiconductor
Description:
DIODE SIL CARB 1.7KV 50A TO247-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Not For New Designs
Current - Reverse Leakage @ Vr:
12 µA @ 1700 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
669pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1700 V
Current - Average Rectified (Io):
50A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GB10MPS17
Introduction
Diode 1700 V 50A Through Hole TO-247-2
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