GP3D030A120B
manufacturer:
SemiQ
Description:
DIODE SIL CARB 1.2KV 30A TO247-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
60 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 30 A
Package:
Tube
Series:
Amp+™
Capacitance @ Vr, F:
1762pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
SemiQ
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
30A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GP3D030
Introduction
Diode 1200 V 30A Through Hole TO-247-2
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| Image | Part # | Description | |
|---|---|---|---|
|
|
GP3D020A120B |
DIODE SIL CARB 1.2KV 20A TO247-2
|
|
|
|
GP3D015A120B |
DIODE SIL CARB 1.2KV 15A TO247-2
|
|
|
|
GP3D040A065U |
DIODE SIL CARB 650V 40A TO247-3
|
|
|
|
GP3D010A120B |
DIODE SIL CARB 1.2KV 10A TO247-2
|
|
|
|
GP3D020A065A |
DIODE SIL CARB 650V 20A TO220-2
|
|
|
|
GP3D010A065B |
DIODE SIL CARB 650V 10A TO247-2
|
|
|
|
GP3D010A065A |
DIODE SIL CARB 650V 10A TO220-2
|
|
|
|
GP3D010A065D |
DIODE SIC 650V 8A TO263-2L
|
|
|
|
GP3D008A065A |
DIODE SIL CARB 650V 8A TO220-2
|
|
|
|
GP3D008A065D |
DIODE SIC 650V 8A TO263-2L
|
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