1N6625E3/TR
manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 1.1KV 1A A AXIAL
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 1100 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.95 V @ 1.5 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
A, Axial
Reverse Recovery Time (trr):
80 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
A, Axial
Voltage - DC Reverse (Vr) (Max):
1100 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Introduction
Diode 1100 V 1A Through Hole A, Axial
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