JANS1N6641
manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 100V 300MA DO35
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 NA @ 50 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 200 MA
Package:
Bulk
Series:
Military, MIL-PRF-19500/609
Capacitance @ Vr, F:
-
Supplier Device Package:
DO-35 (DO-204AH)
Reverse Recovery Time (trr):
5 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
300mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Introduction
Diode 100 V 300mA Through Hole DO-35 (DO-204AH)
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