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IPD80P03P4L07ATMA2
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 80A TO252-31
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
P-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
2V @ 130µA
Series:
Automotive, AEC-Q101, OptiMOS®-P2
Vgs (Max):
+5V, -16V
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 10 V
Supplier Device Package:
PG-TO252-3-11
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 80A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
5700 PF @ 25 V
Drain To Source Voltage (Vdss):
30 V
Power Dissipation (Max):
88W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD80P03
Model Number:
IPD80P03P4L07ATMA2
Introduction
P-Channel 30 V 80A (Tc) 88W (Tc) Surface Mount PG-TO252-3-11
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