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SI1416EDH-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 3.9A SOT-363
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Supplier Device Package:
SC-70-6
Rds On (Max) @ Id, Vgs:
58mOhm @ 3.1A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Power Dissipation (Max):
2.8W (Tc)
Package / Case:
6-TSSOP, SC-88, SOT-363
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
3.9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI1416
Model Number:
SI1416EDH-T1-GE3
Introduction
N-Channel 30 V 3.9A (Tc) 2.8W (Tc) Surface Mount SC-70-6
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