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SQ2364EES-T1_GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 60V 2A SOT23-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
2.5 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
240mOhm @ 2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
330 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Power Dissipation (Max):
3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ2364
Model Number:
SQ2364EES-T1_GE3
Introduction
N-Channel 60 V 2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
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