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EPC8009
manufacturer:
EPC
Description:
GANFET N-CH 65V 4A DIE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
0.45 NC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
52 PF @ 32.5 V
Series:
EGaN®
Vgs (Max):
+6V, -4V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
Die
Rds On (Max) @ Id, Vgs:
130mOhm @ 500mA, 5V
Mfr:
EPC
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Power Dissipation (Max):
-
Package / Case:
Die
Drain To Source Voltage (Vdss):
65 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Model Number:
EPC8009
Introduction
N-Channel 65 V 4A (Ta) Surface Mount Die
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| Image | Part # | Description | |
|---|---|---|---|
|
|
EPC2302ENGRT |
TRANS GAN 100V DIE .0019OHM
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|
EPC2049ENGRT |
GANFET N-CH 40V 16A DIE
|
|
|
|
EPC2034 |
GANFET N-CH 200V 48A DIE
|
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|
|
EPC2030ENGRT |
GANFET NCH 40V 31A DIE
|
|
|
|
EPC2031ENGRT |
GANFET NCH 60V 31A DIE
|
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|
EPC2016 |
GANFET N-CH 100V 11A DIE
|
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EPC2021ENGR |
TRANS GAN 80V 60A BUMPED DIE
|
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EPC2014 |
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|
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EPC2015 |
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|
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EPC2619ENGRT |
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|
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