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SI5457DC-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 20V 6A 1206-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
38 NC @ 10 V
Rds On (Max) @ Id, Vgs:
36mOhm @ 4.9A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
1206-8 ChipFET™
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
5.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI5457
Model Number:
SI5457DC-T1-GE3
Introduction
P-Channel 20 V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™
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