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UJ3C120080K3S

manufacturer:
Qorvo
Description:
SICFET N-CH 1200V 33A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6V @ 10mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
51 NC @ 15 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 12V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1500 PF @ 100 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Mfr:
Qorvo
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
254.2W (Tc)
Technology:
SiCFET (Cascode SiCJFET)
Base Product Number:
UJ3C120080
Model Number:
UJ3C120080K3S
Introduction
N-Channel 1200 V 33A (Tc) 254.2W (Tc) Through Hole TO-247-3
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