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G2R1000MT33J
manufacturer:
GeneSiC Semiconductor
Description:
SIC MOSFET N-CH 4A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 2mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 20 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain To Source Voltage (Vdss):
3300 V
Vgs (Max):
+20V, -5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
238 PF @ 1000 V
Mounting Type:
Surface Mount
Series:
G2R™
Supplier Device Package:
TO-263-7
Mfr:
GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
74W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
G2R1000
Model Number:
G2R1000MT33J
Introduction
N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
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