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ISS55EP06LMXTSA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 60V 180MA SOT23-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 11µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.59 NC @ 10 V
Rds On (Max) @ Id, Vgs:
5.5Ohm @ 180mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
18 PF @ 30 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-SOT23-3-5
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
180mA (Ta)
Power Dissipation (Max):
400mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISS55EP06
Model Number:
ISS55EP06LMXTSA1
Introduction
P-Channel 60 V 180mA (Ta) 400mW (Ta) Surface Mount PG-SOT23-3-5
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