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PSMN3R9-100YSFX
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 100V 120A LFPAK56
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Gate Charge (Qg) (Max) @ Vgs:
111 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7360 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56; Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Power Dissipation (Max):
245W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN3R9
Model Number:
PSMN3R9-100YSFX
Introduction
N-Channel 100 V 120A (Ta) 245W (Ta) Surface Mount LFPAK56; Power-SO8
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