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PMV280ENEAR
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 100V 1.1A TO236AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
6.8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
385mOhm @ 1.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
190 PF @ 50 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q100, TrenchMOS™
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Power Dissipation (Max):
580mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMV280
Model Number:
PMV280ENEAR
Introduction
N-Channel 100 V 1.1A (Ta) 580mW (Ta) Surface Mount TO-236AB
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