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EPC2306ENGRT
manufacturer:
EPC
Description:
TRANS GAN 100V .0038OHM3X5MM QFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
16.3 NC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
2366 PF @ 50 V
Series:
EGaN®
Vgs (Max):
+6V, -4V
Vgs(th) (Max) @ Id:
2.5V @ 7mA
Supplier Device Package:
7-QFN (3x5)
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 25A, 5V
Mfr:
EPC
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Power Dissipation (Max):
-
Package / Case:
7-PowerWQFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
48A (Ta)
Technology:
GaNFET (Gallium Nitride)
FET Feature:
-
Model Number:
EPC2306ENGRT
Introduction
N-Channel 100 V 48A (Ta) Surface Mount 7-QFN (3x5)
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| Image | Part # | Description | |
|---|---|---|---|
|
|
EPC2302ENGRT |
TRANS GAN 100V DIE .0019OHM
|
|
|
|
EPC2049ENGRT |
GANFET N-CH 40V 16A DIE
|
|
|
|
EPC2034 |
GANFET N-CH 200V 48A DIE
|
|
|
|
EPC2030ENGRT |
GANFET NCH 40V 31A DIE
|
|
|
|
EPC2031ENGRT |
GANFET NCH 60V 31A DIE
|
|
|
|
EPC2016 |
GANFET N-CH 100V 11A DIE
|
|
|
|
EPC2021ENGR |
TRANS GAN 80V 60A BUMPED DIE
|
|
|
|
EPC2014 |
GANFET N-CH 40V 10A DIE OUTLINE
|
|
|
|
EPC2015 |
GANFET N-CH 40V 33A DIE OUTLINE
|
|
|
|
EPC2619ENGRT |
TRANS GAN 80V .0033OHM 6LGA
|
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