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EPC2050
manufacturer:
EPC
Description:
TRANS GAN BUMPED DIE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
Die
Gate Charge (Qg) (Max) @ Vgs:
4 NC @ 5 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 6A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
350 V
Vgs (Max):
+6V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
628 PF @ 280 V
Mounting Type:
Surface Mount
Series:
EGaN®
Supplier Device Package:
Die
Mfr:
EPC
Current - Continuous Drain (Id) @ 25°C:
6.3A (Ta)
Power Dissipation (Max):
-
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
EPC20
Model Number:
EPC2050
Introduction
N-Channel 350 V 6.3A (Ta) Surface Mount Die
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