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IRF200P222
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 182A TO247AC
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 270µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
203 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 82A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9820 PF @ 50 V
Mounting Type:
Through Hole
Series:
StrongIRFET™
Supplier Device Package:
TO-247AC
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
182A (Tc)
Power Dissipation (Max):
556W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF200
Model Number:
IRF200P222
Introduction
N-Channel 200 V 182A (Tc) 556W (Tc) Through Hole TO-247AC
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