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SCTW40N120G2VAG
manufacturer:
STMicroelectronics
Description:
SICFET N-CH 1200V 33A HIP247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
63 NC @ 18 V
Rds On (Max) @ Id, Vgs:
105mOhm @ 20A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1230 PF @ 800 V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
HiP247™
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
290W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTW40
Model Number:
SCTW40N120G2VAG
Introduction
N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™
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