english
G2R1000MT17J
manufacturer:
GeneSiC Semiconductor
Description:
SIC MOSFET N-CH 3A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds:
139 PF @ 1000 V
Series:
G2R™
Vgs (Max):
+20V, -10V
Package:
Tube
Supplier Device Package:
TO-263-7
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2A, 20V
Mfr:
GeneSiC Semiconductor
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Power Dissipation (Max):
54W (Tc)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Drain To Source Voltage (Vdss):
1700 V
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
G2R1000
Model Number:
G2R1000MT17J
Introduction
N-Channel 1700 V 3A (Tc) 54W (Tc) Surface Mount TO-263-7
Send RFQ
Stock:
MOQ: