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NTMTSC1D6N10MCTXG
manufacturer:
onsemi
Description:
MOSFET N-CH 100V 35A/267A 8TDFNW
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount, Wettable Flank
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
4V @ 650µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
106 NC @ 10 V
Supplier Device Package:
8-TDFNW (8.3x8.4)
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 90A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
7630 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
5.1W (Ta), 291W (Tc)
Package / Case:
8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C:
35A (Ta), 267A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMTSC1
Model Number:
NTMTSC1D6N10MCTXG
Introduction
N-Channel 100 V 35A (Ta), 267A (Tc) 5.1W (Ta), 291W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)
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