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G2R50MT33K
manufacturer:
GeneSiC Semiconductor
Description:
3300V 50M TO-247-4 SIC MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
340 NC @ 20 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
7301 PF @ 1000 V
Series:
G2R™
Vgs (Max):
+25V, -10V
Vgs(th) (Max) @ Id:
3.5V @ 10mA (Typ)
Supplier Device Package:
TO-247-4
Rds On (Max) @ Id, Vgs:
50mOhm @ 40A, 20V
Mfr:
GeneSiC Semiconductor
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Power Dissipation (Max):
536W (Tc)
Package / Case:
TO-247-4
Drain To Source Voltage (Vdss):
3300 V
Current - Continuous Drain (Id) @ 25°C:
63A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
Standard
Model Number:
G2R50MT33K
Introduction
N-Channel 3300 V 63A (Tc) 536W (Tc) Through Hole TO-247-4
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