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SIUD412ED-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 12V 500MA PPAK 0806
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 0806
Gate Charge (Qg) (Max) @ Vgs:
0.71 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
340mOhm @ 500mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
12 V
Vgs (Max):
±5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
21 PF @ 6 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 0806
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
500mA (Tc)
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIUD412
Model Number:
SIUD412ED-T1-GE3
Introduction
N-Channel 12 V 500mA (Tc) 1.25W (Ta) Surface Mount PowerPAK® 0806
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