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IRFU120NPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 9.4A IPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Rds On (Max) @ Id, Vgs:
210mOhm @ 5.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
330 PF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
IPAK (TO-251AA)
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
9.4A (Tc)
Power Dissipation (Max):
48W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFU120
Model Number:
IRFU120NPBF
Introduction
N-Channel 100 V 9.4A (Tc) 48W (Tc) Through Hole IPAK (TO-251AA)
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