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BSH103BKR
manufacturer:
Nexperia USA Inc.
Description:
BSH103BK - 30 V, N-CHANNEL TRENC
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
1.2 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
79.3 PF @ 15 V
Series:
TrenchMOS™
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Supplier Device Package:
TO-236AB
Rds On (Max) @ Id, Vgs:
270mOhm @ 1A, 4.5V
Mfr:
Nexperia USA Inc.
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Power Dissipation (Max):
330mW (Ta), 2.1W (Tc)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSH103BKR
Introduction
N-Channel 30 V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB
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