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SSM3J09FU,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 30V 200MA USM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.8V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds:
22 PF @ 5 V
Series:
-
Vgs (Max):
±20V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Supplier Device Package:
USM
Rds On (Max) @ Id, Vgs:
2.7Ohm @ 100mA, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
3.3V, 10V
Power Dissipation (Max):
150mW (Ta)
Package / Case:
SC-70, SOT-323
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J09
Model Number:
SSM3J09FU,LF
Introduction
P-Channel 30 V 200mA (Ta) 150mW (Ta) Surface Mount USM
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