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SI1012X-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 500MA SC89-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
0.75 NC @ 4.5 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±6V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Supplier Device Package:
SC-89-3
Rds On (Max) @ Id, Vgs:
700mOhm @ 600mA, 4.5V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Power Dissipation (Max):
250mW (Ta)
Package / Case:
SC-89, SOT-490
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI1012
Model Number:
SI1012X-T1-GE3
Introduction
N-Channel 20 V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3
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