SSM3J168F,LF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
3 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 100mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
82 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
SOT-23-3
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Power Dissipation (Max):
1.2W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J168
Model Number:
SSM3J168F,LF
Introduction
P-Channel 60 V 400mA (Ta) 1.2W (Ta) Surface Mount SOT-23-3
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