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SSM3K357R,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 650MA SOT23F
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
150°C
Package / Case:
SOT-23-3 Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
1.5 NC @ 5 V
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 150mA, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
60 PF @ 12 V
Mounting Type:
Surface Mount
Series:
π-MOSV
Supplier Device Package:
SOT-23F
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
650mA (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3K357
Model Number:
SSM3K357R,LF
Introduction
N-Channel 60 V 650mA (Ta) 1W (Ta) Surface Mount SOT-23F
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