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IRFHS8342TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 8.8A/19A TSDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.35V @ 25µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
8.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 8.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
600 PF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
PG-TSDSON-6
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta), 19A (Tc)
Power Dissipation (Max):
2.1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFHS8342
Model Number:
IRFHS8342TRPBF
Introduction
N-Channel 30 V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount PG-TSDSON-6
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