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SQS481ENW-T1_GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 150V 4.7A PPAK1212-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
11 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.095Ohm @ 5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
385 PF @ 75 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Power Dissipation (Max):
62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQS481
Model Number:
SQS481ENW-T1_GE3
Introduction
P-Channel 150 V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
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