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IRFHM3911TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 3.2A/20A 8PQFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 35µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
26 NC @ 10 V
Rds On (Max) @ Id, Vgs:
115mOhm @ 6.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
760 PF @ 50 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
8-PQFN (3x3)
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta), 20A (Tc)
Power Dissipation (Max):
2.8W (Ta), 29W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFHM3911
Model Number:
IRFHM3911TRPBF
Introduction
N-Channel 100 V 3.2A (Ta), 20A (Tc) 2.8W (Ta), 29W (Tc) Surface Mount 8-PQFN (3x3)
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